SiC(6H-SiC,4H-SiC )
N-type silicon carbide substrate material is an essential material to support the development of the power electronics industry. Its outstanding physical characteristics such as high-pressure resistance and high-frequency resistance can be widely used in high-power high-frequency electronic devices, electric vehicle PCU, photovoltaic inverter, rail transit power control system and other fields, and can play a role of reducing volume simplification system and improving power density.
CasCrysTech (CCT) provides high quality SiC(Silicon Carbide) crystal substrate which can be customized upon customer's requirements.
Uses/Applications
N-type silicon carbide substrate material is an essential material to support the development of the power electronics industry.
High-power high-frequency electronic devices, electric vehicle PCU, photovoltaic inverter, rail transit power control system and other fields.
Play a role of reducing volume simplification system and improving power density.
Features/Benefits
It has outstanding physical characteristics such as high-pressure resistance and high-frequency resistance.
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Growth Method
Seed crystal sublimation method, PVT (Physical gas phase transfer)
Crystal Structure
Hexagonal
Lattice Constant
a=3.08 Å, c=15.08 Å
Marshalling Sequence
ABCACB(6H), ABCBABCB(4H)
Band gap
2.93 eV
Mohs Hardness
9.2 (mohs)
Thermal Conductivity @300K
5 (W/ cmK)
Dielectric Constant
e(11)=e(22)=9.66 e(33)=10.33
Conductor Type
I
N
Dopant
Undoped
Vanadium
Nitrogen
Resistivity （ohm.cm）
˃ 1 x 107
˃ 1 x 105
0.01-0.2
Dimension
5x5mm，10x10mm，15x15mm，20x20mm
Ø50.8, Ø100 mm, Ø150mm
Thickness
0.33/0.35/0.5mm,
Customize upon request.
Polishing
One side or two sides
Orientation
<0001>or <0001>off 4.0º
Orientation Tolerance
±0.5°
Edge Orientation Accuracy
2°（Special requirements can reach within 1°）
Surface Roughness
Ra<5Å（5×5μm）
Package
Class 100 clean bag, Class 1000 super clean room
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Dimension
5x5mm，10x10mm，15x15mm，20x20mm
Ø50.8, Ø100 mm, Ø150mm
Thickness0.33/0.35/0.5mm
Customize upon request.